Take responsibility: performance of advanced characterization of p-GaN/AlGaN/GaN Gate Injection Transistors (GIT) and high-frequency RF characterization using ENA/PNA vector network analyzers to validate performance up to the cutoff frequency Reliable work: execution of transient and pulsed measurements, including trapping effects analysis using the TCS (Transient Current Spectroscopy) method, as well as pulsed transfer and output characteristics Holistic overview: measurements across a wide modeling space, covering geometry scaling, temperature scaling, packaged and on-wafer configurations, and wafer maps,including measurements at various temperatures to model electrothermal behavior and accurately capture self-heating effects Data is everything: validation and analysis of measured data for accuracy, consistency, and reliability, including extraction of critical parameters such as trapping and hole injection parameters, and proposal of alternative methodologies to enhance data quality and measurement accuracy Shape the future: development and optimization of automation scripts, such as Python, to streamline measurement execution and data analysis Working part-time: The focus is on studies. Study field: master's degree in Physics, Electrical Engineering or similar Skills: skilled in scripting (e.g. Python) with ability to interpret and document measurement results Interests: in GaN HEMTs, advanced DC and AC measurements as well as power electronics applications Way of working: collaborative, excellent team player and eager to work in a dynamic R&D environment Language skills: very good English skills, both written and spoken We are on a journey to create the best Infineon for everyone. This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant´s experience and skills.
